Power Added Efficiency Enhancement in a 2.4 GHz Class E Power Amplifier in 0.13µm CMOS Technology
Abstract
Power-Added-Efficiency (PAE) is one of the most significant factors by which the performance of a Power Amplifier (PA) can be scrutinized. A new approach to increase PAE is proposed in this paper. Plus, the trade-off between increasing VDD for more output power and more PAE is examined. In addition, new and precise calculations for both output voltage and output power are achieved. Furthermore, the concept of using an equivalent circuit of a transformer is described to justify the new way to increase PAE. The designed Power Amplifier (PA) operates at 2.4GHz. The simulation is performed by Advanced Design System (ADS) and MATLAB. Plus, the TSMC 0.13 µm CMOS process is utilized to fulfil the procedure. The class E PA is designed to gain two different objectives, including more output power and more PAE. With VDD= 1.18 V the output power is 19.52 dBm and PAE is 68.5 %. Ultimately, with VDD=4.4 V the output power is 31.24 dBm and PAE is 62.7 %.
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Wu, H.; Li, B.; Hu, Y.; Wang, K.; Liang, Z.; Wu, Z.; Liu, Y. Fully-integrated linear CMOS power amplifier with proportional series combining transformer for S-Band applications. IEICE Electron. 2018, 15, 20171100.
Kim, J. Linear CMOS power amplifier using continuous gate voltage control. Microw. Opt. Technol. Lett. 2018, 60, 337–341.
Kim, K.; Ko, J.; Nam, S.; Lee, S. A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications. IEEE Trans. Circuits Syst. II Briefs 2016, 63, 533–537.
Samal, L.; Mahapatra, K.K.; Raghuramaiah, K. Class-C power amplifier design for GSM application. In Proceedings of the 2012 International Conference on Computing, Communication and Applications, Tamilnadu, India, 22–24 February 2012; pp. 1–5.
Cai, W.; Huang, L.; Wang, S. Class D Power Amplifier for Medical Application. Inf. Eng. Int. J. 2016, 4, 9–15.
Ma, L.; Zhou, J.; Yu, Z. Design of a class-F power amplifier with expanding bandwidth. In Proceedings of the 2015 Asia-Pacific Microwave Conference (APMC), Nanjing, China, 6–9 December 2015; pp. 1–3.
Sowlati, T.; Leenaerts, D. A 2.4-GHz 0.18µm CMOS Self-biased cascode power amplifier. IEEE J. Circuits 2003, 38, 1318–1324.
Ding, Y.; Harjani, R. A high-efficiency CMOS +22-dBm linear power amplifier. IEEE J. Circuits 2005, 40, 1895–1900.
Sira, D.; Thomsen, P.; Larsen, T. A cascode modulated class-E power amplifier for wireless communications. Microelectron. J. 2011, 42, 141–147.
Bameri, H.; Hakimi, A.; Movahhedi, M. A linear-high range output power control technique for cascode power amplifiers. Microelectron. J. 2011, 42, 1025–1031.
Sahu, S.R.; Deshmukh, A.Y. Design of High Efficiency Two Stage Power Amplifier in 0.13 µM RF CMOS Technology for 2.4 GHZ WLAN Application. Int. J. VLSI Des. Commun. Syst. 2013, 4, 31–40.
Fouad, H.; Zekry, A.H.; Fawzy, K. Self-Biased 0.13 µm CMOS 2.4-GHz Class E Cascode Power Amplifier. In Proceedings of the 26th National Radio Science Conference, New Cairo, Egypt, 17–19 March 2009; pp. 1–12.
Hong, J.; Imanishi, D.; Okada, K.; Matsuzawa, A. A 2.4 GHz fully integrated CMOS power amplifier using capacitive cross-coupling. In Proceedings of the 2010 IEEE International Conference on Wireless Information Technology and Systems, Honolulu, HI, USA, 28 August–3 September 2010; pp. 1–4.
Kiumarsi, H.; Mizuochi, Y.; Ito, H.; Ishihara, N.; Masu, K. A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process. Jpn. J. Appl. Phys. 2012, 51, 2.
Ho, K.-W.; Luong, H.C. A 1-V CMOS power amplifier for Bluetooth applications. IEEE Trans. Circuits Syst. II Briefs 2003, 50, 445–449.
Lee, C.; Park, C. 2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain. Sci. J. 2014, 2014, 5–10.
Ghorbani, A.R.; Ghaznavi-Ghoushchi, M.B. A 35.6dB, 43.3% PAE class E differential power amplifier in 2.4 GHz with cross coupling neutralization for IoT applications. In Proceedings of the 24th Iranian Conference on Electrical Engineering (ICEE), Shiraz, Iran, 10–12 May 2016; pp. 490–495.
Zhuo, W.; Li, X.; Shekhar, S.; Embabi, S.; De Gyvez, J.; Allstot, D.; Sanchez-Sinencio, E. A capacitor cross-coupled common-gate low-noise amplifier. IEEE Trans. Circuits Syst. II Briefs 2005, 52, 875–879.
Asada, H.; Matsushita, K.; Bunsen, K.; Okada, K.; Matsuzawa, A. A 60GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16% PAE. In Proceedings of the 41st European Microwave Conference (EuMC 2011), Manchester, UK, 10–13 October 2011; pp. 1115–1118.
An, K.H.; Lee, D.H.; Lee, O.; Kim, H.; Han, J.; Kim, W.; Lee, C.-H.; Kim, H.; Laskar, J. A 2.4 GHz Fully Integrated Linear CMOS Power Amplifier With Discrete Power Control. IEEE Microw. Wirel. Compon. Lett. 2009, 19, 479–481.
Lee, T.H. The Design of CMOS Radio-Frequency Integrated Circuits, 2nd ed.; Cambridge University Press (CUP): Cambridge, UK, 2003.
Murad, S.A.Z.; Pokharel, R.K.; Kanaya, H.; Yoshida, K.; Nizhnik, O. A 2.4 GHz 0.18µm CMOS Class E single-ended switching power amplifier with a self-biased cascode. AEU Int. J. Electron. Commun. 2010, 64, 813–818.
Saari, V.; Juurakko, P.; Ryynänen, J.; Halonen, K. Integrated 2.4 GHz class-E CMOS power amplifier. In Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, Long Beach, CA, USA, 12–14 June 2005; pp. 645–648.
Ren, Z.; Zhang, K.; Liu, L.; Li, C.; Chen, X.; Liu, D.; Liu, Z.; Zou, X. On-chip power combining techniques for watt-level linear power amplifiers in 0.18 µm CMOS. J. Semicond. 2015, 36, 95002.
Ezzulddin, A.S.; Jasim, S.H. Design of RF Power Amplifiers using Parallel-Series Power Combining Transformers. Eng. Technol. J. 2015, 33, 294–307.
Baek, S.; Ryu, H.; Nam, I.; Jeong, M.; Kim, B.; Lee, O. A 2.4-GHz CMOS Power Amplifier with Parallel-Combined Transistors and Selective Adaptive Biasing for Wireless Lan Applications. Microw. Opt. Technol. Lett. 2016, 58, 1374–1377.
Yoo, J.; Lee, C.; Kang, I.; Son, M.; Sim, Y.; Park, C. 2.4-GHz CMOS Linear Power Amplifier for IEEE 802.11N WLAN Applications. Microw. Opt. Technol. Lett. 2017, 59, 546–550.,
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